An accurate method for extracting the critical field in short channel NMOS devicesAMHOUCHE, Y; EL ABBASSI, A; RAÏS, K et al.Active and passive electronic components. 2001, Vol 24, Num 3, pp 135-140, issn 0882-7516Article

Universal signature of ballistic transport in nanoscale field effect transistorsSCHLIEMANN, A; WORSCHECH, L; FORCHEL, A et al.International Electron Devices Meeting. 2004, pp 1039-1042, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Effects of device layout on the drain breakdown voltages in MuGFETsJIN YOUNG KIM; CHONG GUN YU; JONG TAE PARK et al.Microelectronics and reliability. 2011, Vol 51, Num 9-11, pp 1547-1550, issn 0026-2714, 4 p.Conference Paper

Comparison of carrier velocity gain in uniaxially and biaxially strained N-MOSFETsBENSHIDOUM, T; GHIBAUDO, G; BOEUF, F et al.Electronics Letters. 2007, Vol 43, Num 11, pp 647-649, issn 0013-5194, 3 p.Article

Drain voltage dependence of on resistance in 700V super junction LDMOS transistorMOHAMMED TANVIR QUDDUS; TU, Larry; ISHIGURO, Takeshi et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 201-204, isbn 4-88686-060-5, 4 p.Conference Paper

Analysis of temperature and drain voltage dependence of substrate current in deep submicrometer MOSFET'sAMHOUCHE, Y; EL ABBASSI, A; RAÏS, K et al.Active and passive electronic components. 2001, Vol 24, Num 3, pp 201-209, issn 0882-7516Article

Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modellingAZOUI, T; TOUNSI, P; DORKEL, J. M et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1750-1754, issn 0026-2714, 5 p.Conference Paper

Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistorsDAPENG ZHOU; MINGXIANG WANG; HAN HAO et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045022.1-045022.5Article

A Parabolic Potential Barrier-Oriented Compact Model for the κ_BT Layer's Width in Nano-MOSFETsCHEN, Ming-Jer; LU, Li-Fang.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 5, pp 1265-1268, issn 0018-9383, 4 p.Article

Researches on the injected charge potential barrier occurring in the static induction transistor in the high current regionYONGSHUN WANG; RONG WU; CHUNJUAN LIU et al.Semiconductor science and technology. 2008, Vol 23, Num 2, issn 0268-1242, 025005.1-025005.6Article

Ballistic to diffusive crossover in III-V nanowire transistorsGILBERT, M. J; BANERJEE, Sanjay K.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 4, pp 645-653, issn 0018-9383, 9 p.Article

Temperature and drain voltage dependence of gate-induced drain leakageLOPEZ, L; MASSON, P; NEE, D et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 101-105, issn 0167-9317, 5 p.Conference Paper

Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltageNAGAHARA, M; KIKKAWA, T; JOSHIN, K et al.IEDm : international electron devices meeting. 2002, pp 693-696, isbn 0-7803-7462-2, 4 p.Conference Paper

Suppression of scattering between scattering-wave states in integer quantum Hall transitionsMACHIDA, Tomoki; KOMIYAMA, Susumu.Physica. B, Condensed matter. 2001, Vol 298, Num 1-4, pp 101-105, issn 0921-4526Conference Paper

Heavy ions sensitivity of power mosfets = Comportement des mosfets de puissance sous ions lourdsTASTET, P; GARNIER, J.IEEE transactions on nuclear science. 1992, Vol 39, Num 3, pp 357-361, issn 0018-9499, 1Conference Paper

Enhancement-mode quantum-well Ge_xSi_1-x PMOSNAYAK, D. K; WOO, J. C. S; PARK, J. S et al.IEEE electron device letters. 1991, Vol 12, Num 4, pp 154-156, issn 0741-3106Article

Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistorsYONG XU; MINARI, Takeo; TSUKAGOSHI, Kazuhito et al.Organic electronics (Print). 2011, Vol 12, Num 12, pp 2019-2024, issn 1566-1199, 6 p.Article

Envelope-tracking-based Doherty power amplifierTHIAN, Mury; GARDNER, Peter.International journal of electronics. 2010, Vol 97, Num 5-6, pp 525-530, issn 0020-7217, 6 p.Article

Temperature independent current biasing employing TFETGUO, P. F; YANG, Y; SAMUDRA, G et al.Electronics letters. 2010, Vol 46, Num 11, pp 786-787, issn 0013-5194, 2 p.Article

Bulk-drain connected load for subthreshold MOS current-mode logicCANNILLO, F; TOUMAZOU, C; LANDE, T. S et al.Electronics Letters. 2007, Vol 43, Num 12, pp 662-664, issn 0013-5194, 3 p.Article

Source-drain follower for monolithically integrated sensor arrayNAKAZATO, K; OHURA, M; UNO, S et al.Electronics Letters. 2007, Vol 43, Num 23, pp 1255-1257, issn 0013-5194, 3 p.Article

Extending PAD (Power Allocation and Distribution)GOLEMBIEWSKI, Walter T; SONG, Kyo D; CHOI, S. H et al.SPIE proceedings series. 2005, pp 32-35, isbn 0-8194-5744-2, 4 p.Conference Paper

Unusual floating body effect in fully depleted MOSFETsBAWEDIN, M; CRISTOLOVEANU, S; FLANDRE, D et al.IEEE international SOI conference. 2004, pp 151-152, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper

Combined electrical and Raman characterization of C₆₀ based organic field effect transistorsPAEZ, Beynor A; BARTZSCH, Matthias; SALVAN, Georgeta et al.SPIE proceedings series. 2003, pp 63-70, isbn 0-8194-5090-1, 8 p.Conference Paper

A robust and physically based compact SOI-LDMOS modelAARTS, A. C. T; VAN LANGEVELDE, R.ESSCIRC 2002 : European solid-state circuits conferenceEuropean solid-state device research conference. 2002, pp 455-458, isbn 88-900847-8-2, 4 p.Conference Paper